Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness\r\nof 46nm and lower than 5 nm, respectively, were fabricated using a selective ââ?¬Å?gate-recessedââ?¬Â process on the same silicon wafer.\r\nTheir current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of\r\nmagnitude.We analyzed this result by considering the severemobility degradation and the influence of a huge series resistance and\r\nfound that the last one seemsmore coherent. Then the electrical characteristics of theNSB can be analytically derived by integrating\r\na gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance\r\nis reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation\r\ncurrent with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other\r\nnanodevices in which series resistance and/or mobility degradation is of a great concern.
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